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Resonant tunneling diode simulation with NEGF

(Nanowerk News) Simulation of devices at atomistic scale is today very important as, in the last years, semiconductor devices dimensions are approaching typical lengths of a few nanometers.

Nanowerk News
July 1, 2009

Simulation of devices at atomistic scale is today very important as, in the last years, semiconductor devices dimensions are approaching typical lengths of a few nanometers. Those devices cannot be simulated by means of traditional simulators based on continuum approaches.

RTDNEGF is the nanoHUB tool dedicated to the simulation of Resonant Tunneling Diodes by means of the increasingly popular Non-Equilibrium Green Formalism (NEGF).

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RTD with NEGF Tool
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